Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
نویسندگان
چکیده
منابع مشابه
Modeling the Resistive Switching Process in Transition Metal Oxide Based Non-Volatile Memory Devices
Binary transition metal oxides TiOx, NiOx, HfOx, AlOx, TaOx have been recently proposed as possible materials for embedded non-volatile memory modules. Currently, a major bottleneck in determining the scalability, retention and endurance of these devices, is the lack of detailed understanding of resistive switching mechanism. Generally, the process of forming in transition metal oxides systems ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2014
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4867198